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Fully-printed (6,5) CNTFET Pixel Backplane

News

May 24-26, 2016: Exhibited at SID 2016 I-ZONE, San Francisco, CA.
May 24, 2016: Presented at Nanotech 2016, Washington DC.
May 23, 2016: Presented at SID 2016 Business Conference, San Francisco, CA.
March 2, 2016: Presented at FlexTech 2016, Monterey, CA.
November 18-19, 2015: Exhibited at Printed Electronics USA 2015, Santa Clara, CA.
November 17, 2015: Presented at Optomec User Group Meeting, Santa Clara, CA.
August 1, 2015: Fabricated CNT TFTs with ION/IOFF ratio of 10^8 for both n-Type and p-Type transfer characteristics.
July 29, 2015: Awarded US Air Force STTR contract (Contract # FA8750-15-C-0258).
June 4, 2015: Presented our research on SID 2015 Business Conference, San Jose, CA.
November 25, 2014: Developed Active Matrix Light Emitting Display Module with Fully-Printed (6,5) Single-walled Carbon Nanotube Control Circuits.
Dr. Tang was interviewed by IDTechEx at Printed Electronics USA 2014 (https://www.youtube.com/watch?v=oDcQKZFoH2w).
November 19-20, 2014: Exhibited our products and technologies at Booth P20 at Printed Electronics USA 2014, Santa Clara, CA.
May 20, 2014: Awarded NSF SBIR Phase IB (Proposal ID: 1442835).
February 21, 2014: Fabricated the first fully-printed single CNTFET pixel backplane.
December 13, 2013: Awarded NSF SBIR Phase I to develop fully-printed single-walled carbon nanotube transistor backplanes (Proposal ID: 1344904).
November 29, 2013: Developed highly conductive p-doped arc-discharge single-walled carbon nanotubes (around 40 Ohms/sq) for ammonia sensing.
October 28, 2013: Developed a novel type of printable gate dielectric materials with ultra-high capacitance. More importantly, this gate material can withstand high temperature and high pressure, comparable to inorganic oxides.

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Fully-printed (6,5) CNTFET Pixel Backplane

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AMLED controlled by fully-printed (6,5) CNTFET Circuits

Fully-Printed High Performance (6,5) CNTFET